TOKYO, Feb 16 (Reuters) - Japanese chipmaker Kioxia has offered its investor SK Hynix 000660.KS the opportunity to produce semiconductors at its plants in Japan in a bid to revive its merger talks ...

Goldman Sachs recently released a striking report on the high-bandwidth memory (HBM) market, stating that regardless of ...

TOKYO, Jan 27 (Reuters) - Bain Capital is in talks with SK Hynix (000660.KS), opens new tab to restart negotiations to merge memory chip makers Western Digital (WDC.O), opens new tab and Japan's ...

SK hynix to reportedly change wafer cutting for its next-gen HBM4 memory and 400-layer NAND flash, as they're becoming ...

SK hynix supplies 'early' HBM4 memory samples, qualification tests taking longer than HBM3E as its next-gen HBM4 memory is ...

SK Hynix Inc. (KS:000660) shares plunged nearly 9% to 270,000 won on Thursday after Goldman Sachs downgraded the stock to Neutral from Buy, citing concerns over intensifying competition in the ...

TOKYO (Reuters) -SBI Holdings denied a Nikkan Kogyo newspaper report that it is negotiating with South Korea's SK Hynix and Taiwan's UMC about collaboration on a chips plant in Miyagi prefecture.

SK Hynix's retreat came as Goldman Sachs flagged that its earnings growth could lose steam in 2026 on a possible decline in the average sales prices of its HBM products, a crucial component in ...

SK Hynix raised its annual fixed dividend for shareholders by 25%. Credit: SK Hynix. SK Hynix is part of a small group of memory makers competing to cram together the most layers of NAND flash memory.

SEOUL, Dec 30 (Reuters) - South Korea's SK Hynix Inc (000660.KS), opens new tab said it had completed the first phase of its acquisition of Intel Corp's (INTC.O), opens new tab NAND flash memory ...

SK Hynix Inc., the semiconductor arm of SK Group, plans to invest 103 trillion won ($74.8 billion) through 2028, underscoring the conglomerate’s bet on a sector it considers crucial for future- ...

SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1Tb triple level cell 4D NAND flash for ...