"We developed a gate-last approach for TSMC's 28nm high-k metal gate family that is superior in terms of transistor characteristics, high end and low end performance upside, and manufacturability," ...

TSMC’s 28nm low-power with high-k metal gate (HPL) technology adopts the same gate stack as the foundry’s HP technology while meeting more stringent low-leakage requirements with a minimal tradeoff of ...

TSMC (Hsinchu, Taiwan) recently announced the 28-nm process, which allows an option for silicon dioxide or a high-k/metal-gate scheme for the gate stack. The paper does not ... of new applications ...

A technical paper titled “28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview” was published by researchers at Fraunhofer-Institut für Photonische ...