The relentless pursuit of higher frequency operation in modern electronics has spurred significant advancements in terahertz (THz) oscillator technology and the development of strained silicon devices ...

The two techniques, strained silicon and silicon on insulator (SOI), have been brought together for the first time in a technique called strained silicon directly on insulator (SSDOI), IBM said.

IBM and Advanced Micro Devices (AMD) have jointly developed a new method for implementing strained silicon technology on both positive and negative transistors, the companies said Monday. The new ...

In a statement ahead of the IEEE International Electron Devices Meeting in San Francisco, the two companies called the technology a "breakthrough process" that will speed up transistors by 24 percent ...

A strained germanium epilayer on silicon achieves a record hole mobility, enabling faster low-power electronics and scalable quantum-ready semiconductor platforms. (Nanowerk News) Most modern ...

Researchers engineered a strained germanium layer on silicon that allows charge to move faster than in any silicon-compatible material to date. This record mobility could lead to chips that run cooler ...

Maxwell Technologies has released a research paper in conjunction with a number of universities including Nanchang University, the Hong Kong Polytechnic University and Henan Normal University, ...

Scientists at the University of Warwick and the National Research Council of Canada have achieved and measured the highest “hole mobility” ever recorded in a silicon-compatible material. Most modern ...