A Russian engineer is accused of leaking confidential technical data from ASML, NXP, TSMC, and GlobalFoundries to Russia, allegedly to support construction of a 28nm-capable fab.

NXP Embraces 28nm FDSOI for MCUs By Peter Clarke, EETimes, PARIS, Jan. 18, 2016 – NXP is set to extend the use of 28nm fully-depleted silicon-on-insulator (FDSOI) process technology down to its ...

“Zendar’s technology combined with NXP’s state-of-the-art radar portfolio aims to enable high-resolution radar sensing for both, edge and upcoming distributed vehicle architectures. Together with ...

FD-SOI sauce Samsung Foundry will soon mass produce magnetoresistive random-access memory (MRAM) chips using 28nm fully depleted silicon-on-insulator (FD-SOI) process technology.

NXP Introduces Advanced Automotive Radar One-Chip Family for Next-Gen ADAS and Autonomous Driving Systems The new SAF85xx one ... Industry-first 28nm RFCMOS radar one-chip for safety ...

CES 2024 - NXP announces extension of its 28nm RFCMOS radar one chip family ... Combined with NXP’s S32 high-performance processors, vehicle network connectivity and power management, the full system ...

NXP Semiconductors' product development for its largest segment, automotive (51% of revenue), are focused on ADAS and EV. Read why NXPI stock is a strong buy.

Industry-first 28nm RFCMOS radar one-chip for safety-critical ADAS applications, including automated emergency braking and blind-spot detectionThe one-chip solution is comprised of a highly ...

Industry-first 28nm RFCMOS radar one-chip for safety-critical ADAS applications, including automated emergency braking and blind-spot detectionThe one-chip solution is comprised of a highly ...

Industry-first 28nm RFCMOS radar one-chip for safety-critical ADAS applications, including automated emergency braking and blind-spot detectionThe one-chip solution is comprised of a highly ...