“Gate-all-around, or GAA transistors, are a modified transistor structure where the gate contacts the channel from all sides and enables continued scaling ... part of the 3nm system solution. Chip ...

These days, transistor scaling is driving some of the most exciting innovations in device architecture and getting lots of attention as a result. What may be less obvious is the cascading effect ...

Samsung is continuously incorporating GAA technology for sub-3nm chip production to overcome ... there have also been challenges in chip scaling technology. To overcome them, new platforms like ...

By enhancing the gate control, Samsung says that the performance of 3nm nodes will be significantly improved. GAA transistors are field-effect transistors (FET) that feature a gate on all four sides ...

For several generations of semiconductor technology, chip designers have derived great benefit from FinFETs, the three-dimensional field-effect ... scaling while increasing chip performance and ...

Today, the Intel Foundry Technology Research team announced technology breakthroughs in 2D transistor technology using beyond ...

This improves gate control, and performance, by overcoming physical scaling limitations of the traditional Fin Field-Effect Transistor ... the first generation 3nm nodes with GAA reduce power ...

Utilizing the 3nm GAA technology, Samsung will be able to ... data to verify complex products with more functions and tighter scaling. To meet such demands, Samsung strives to provide a more ...

Semiconductor industry research firm TechInsights said it has found that Samsung's 3nm GAA (gate ... commercial utilization of GAA technology, which facilitates the scaling of transistors to ...