IRVINE, Calif., Sept. 12, 2006 (PRIMEZONE) — Microsemi, a manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has launched the first 15 ...
CISSOID, a specialist in high temperature semiconductors, has announced a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. The IPM technology offers an all-in-one ...
The MSK3003 is a 3-phase bridge MOSFET power module that employs space efficient isolated ceramic tab power SIP package. This device interfaces directly with most brushless motor drive IC’s without ...
Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
The T-type circuit structure consists of three MOS FET relays that help reduce the leakage current to a minimal level without affecting the test equipment's inspection accuracy, allowing ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
Toshiba Electronics Europe has added two new 150V N-channel power MOSFET products based upon their latest generation U-MOS X-H Trench process. Credit: Toshiba Electronics Europe The TPH1100CQ5 and ...
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