(Nanowerk News) In an interesting feat of nanoscale engineering, researchers at Lund University in Sweden and the University of New South Wales have made the first nanowire transistor featuring a ...

To make their nanowire wrap-gate transistors, Dhara et al. 3 first sandwiched a layer of indium arsenide nanowires between two layers of a polymer film that changes its structure when exposed to ...

pushing the areal density limit of nanowire transistors even further. The researchers used wrap-around gates, or 'gate-all-around' gates, in the making of their device. These gates consist of a ...

or junctionless transistor is a uniformly doped nanowire without junctions with a wrap-around gate. The idea and basic working principle of the nanowire pinch-off transistor were developed in imec and ...

Hence, nanowire FETs’ other name: “gate-all-around” transistors. However, because of their small size, single nanowires can’t carry enough current to make an efficient transistor. The solution, recent ...

Researchers claim to have made the first nanowire transistor featuring a concentric metal 'wrap gate' that sits horizontally on a silicon substrate. Teams from Lund University in Sweden and the ...

A finished device: Optical microscope image of the transistor (left) and an ultra-scaled vertical nanowire (right ... The researchers then placed a gate stack composed of a very thin gate dielectric ...

The nanowire transistors are constructed by first depositing a InZnO gate on the substrate, then covering it with an Al2O3 gate insulator. Next, nanowires are solution deposited over the gates. This ...

The reconfigurable transistor’s core consists of a nanowire structure embedded in a silicon dioxide shell. Electrons or holes flow from the source at one end of the nanowire through two gates to the ...

A silicon nanowire transistor can suppress off-leakage and achieve further short-channel operation, because its thin wire-shaped silicon channel (nanowire channel) is effectively controlled by the ...

The silicon nanowire transistors have a hafnium-based dielectric layer separating the inner silicon wire from a gate-all-around polycrystalline silicon gate. The silicon wire was made with a range of ...