TSMC unveils its A14 process technology featuring 2nd generation GAA nanosheet transistors and NanoFlex Pro DTCO with production slated for 2028.

The world is heading into the age of gate-all-around (GAA) or nanosheet transistors. While it was never going to save Moore’s Law by itself, the new device is opening the door to continuous ...

At 2nm and/or 3nm, leading-edge foundries and their customers eventually will migrate to a GAA transistor type called the nanosheet FET. GAA FETs provides greater performance at lower power than ...

TSMC Tech Symposium Highlights: A14 Set for 2028 Launch; 9.5 Reticle CoWoS Arriving in 2027 A14 will harness 2nd Gen gate-all-around (GAA) nanosheet transistors, enhanced by its NanoFlex Pro ...

“A GAA transistor is only as good as its weakest channel, thereby requiring individual nanosheet dimensional control metrology,” said Scott Hoover, senior director of strategic product marketing at ...

TSMC claims its upcoming N2 manufacturing node is ahead of schedule on defect reduction, even though it is the company’s first attempt at gate-all-around (GAA) nanosheet transistor technology ...

Gate-all-around (GAA) defies performance limitations of FinFET by allowing transistors to carry more current while staying relatively small.

Leti demoes GAA nanosheet device CEA-Leti has demonstrated fabrication of a new gate-all-around (GAA) nanosheet device as an alternative to FinFET technology targeting high-performance (HPC) ...

The A16 process will follow the company's 2nm node and feature nanosheet gate-all-around (GAA) transistors along with backside power delivery, which it calls Super Power Rail architecture.

GAA nanosheet technology improves density while providing power and performance improvements, but it's only used on the most cutting-edge process nodes.

CEA-Leti has demonstrated fabrication of a new gate-all-around (GAA) nanosheet device as an alternative to FinFET technology targeting high-performance (HPC) applications.