TSMC's N2 (2nm-class ... fabrication processes as it is set to adopt nanosheet gate-all-around transistors and NanoFlex. However, it will come at a much higher price than expected as the world's ...

The vast majority of these advantages are enabled by TSMC's new gate-all-around (GAA) nanosheet transistors along with N2 NanoFlex design-technology co-optimization capability and some other ...

Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, ...

Moving to a new transistor could create potential disruptions for customers. But eventually, finFETs will run out of steam, so TSMC has no choice but to migrate to gate-all-around. Others are also ...

To further improve the control of the transistor channel, engineers found a way to replace the vertical fin with a stack of horizontal sheets, creating a new concept called gate-all-around ...