In these materials, a post-implant anneal activates dopants and repairs implant-induced damage to the crystal structure ... Without an area-specific doping technology, GaN devices are limited to ...

However, very small structure sizes provoke disruptive short ... in Ka-, Q- and W-band using the newly developed GaN HEMTs. SSPAs are characterized by their compactness, robustness and low cost.

The GaN wafer’s unique crystal structure is key to its dual functionality ... side to construct high-electron mobility ...

Via FAST, vertical and lateral integration of III-V devices is possible, if only the interposer structure can be fabricated. b) 3D schematic illustrations and epitaxial structures of AlGaN/GaN HEMT ...

Called INN040W048A, it is a 40V bi-directional GaN-on-silicon HEMT with on-state resistance as low as 4.8mΩ, which comes in a 2.1 x 2.1mm WLCSP package. It follows on from the 40V 15A 7.8mΩmax (5.5mΩ ...