The team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes.

Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

In GaN HEMTs, charge transport primarily depends on a two-dimensional “electron gas” (2DEG). The 2DEG forms because tensile strain at the interface between AlGaN and GaN leads to spontaneous ...

On the other side, GaN on Si HEMT offers news capabilities, such as the possibility to work at higher frequencies and the more and more competitive manufacturing cost.

The GaN transistor structure is a purely lateral device, without the parasitic bipolar junction common to silcon MOSFETs. Therefore, the enhancement GaN reverse bias or “diode” operation has a ...

Direct Interconnect This arrangement allows for short copper posts to be used for a adirect interconnect between the large N-channel MOSFET of the driver die and the GaN HEMT die. This structure ...

Lateral GaN-on-Si HEMTs are already commercially available, but are limited to a blocking voltage of 650 V due to limited GaN layer thicknesses.

The TPH3206PS combines a normally-on GaN-on-silicon HEMT, which withstands high voltages, and a standard low voltage MOSFET, which drives high frequency, in a cascode configuration that ultimately ...

ROHM introduces the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices ROHM introduces the industry’s highest (8V) gate breakdown ...

Researchers have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...