IceGaN is a form of smart power HEMT that features advanced sensing and protection capabilities. According to Daniel Murphy, ...

One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

In these materials, a post-implant anneal activates dopants and repairs implant-induced damage to the crystal structure ... Without an area-specific doping technology, GaN devices are limited to ...

Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator ...

However, very small structure sizes provoke disruptive short ... in Ka-, Q- and W-band using the newly developed GaN HEMTs. SSPAs are characterized by their compactness, robustness and low cost.

ElectrArc240 has clearly knows what he talking about and has spent a long time testing different aspects of two similar power supplies to succinctly demonstrate their differences: one with a GaN hemt ...

The GaN wafer’s unique crystal structure is key to its dual functionality ... side to construct high-electron mobility ...