Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

The pursuit of accurate temperature characterisation in GaN HEMTs confronts fundamental limitations of existing methodologies ...

It involves connecting GaN hemts in parallel with large silicon IGBTs, and has been branded ‘Combo ICeGaN ‘. “Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at ...

This week, at the IEEE International Reliability Physics Symposium (IRPS) 2025, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, demonstrates that, ...