Samsung is adopting the GAA architecture for 3-nm process nodes to overcome the physical scaling and performance limitations of the FinFET architecture. Samsung’s fab executives are quick to point out ...

GAA may have a similar lifetime to finFET. “Most likely it’s going to be around for 10 years,” says Moroz. “But around 2030, I expect the industry to switch to stacked transistors where you have two ...

In this work, a predictive and physical compact model for NanoWire/NanoSheet (NW/NS) Gate-All- Around (GAA) MOSFET is presented. Based on a novel methodology for the calculation of the surface ...

The team managed to process GAA p-FETs with the shortest gate lengths (LG=40nm) and smallest nanowire diameter (d=9nm) reported to date. At these shortest gate lengths, the devices maintain excellent ...

Besides SiGe FinFET, a unique GAA SiGe nanowire channel formation during the gate replacement process has been demonstrated. ... Older 2013 slides of nanowire FET technology. SOURCES – IMEC, AMD, ...

C. -C. Tien and Y. -H. Lin, “Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application,” in IEEE Access, doi: 10.1109/ACCESS.2024.3410677. Tags: band-to-band ...

These breakthrough results advance the development of GAA nanowire MOSFETs, which promise to succeed FinFETs in future technology nodes. GAA nanowire transistors are promising candidates to succeed ...

Nanoelectronics research center imec has reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a ...

Belgian research centre imec has described work on the development of junctionless gate all around (GAA) nanowire FETs (NWFETs) created in lateral and vertical configurations. Such devices are said to ...