Samsung is adopting the GAA architecture for 3-nm process nodes to overcome the physical scaling and performance limitations of the FinFET architecture. Samsung’s fab executives are quick to point out ...

As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the ...

Imec has achieved the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold ...

The nanowire pinch-off FET or junctionless transistor is not affected by the aforementioned junction problem which makes the fabrication process much easier. Moreover, simulation results for a GaAs ...

“While the nanowire does indeed improve short-channel control, it degrades drive current due to its small geometry, typically of the order of 5nm by 5nm,” says Mears. “The nanosheet structure is ...

Belgian research centre imec has described work on the development of junctionless gate all around (GAA) nanowire FETs (NWFETs) created in lateral and vertical configurations.

The team managed to process GAA p-FETs with the shortest gate lengths (LG=40nm) and smallest nanowire diameter (d=9nm) reported to date. At these shortest gate lengths, the devices maintain excellent ...

A new technical paper titled “Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application” was published by researchers at National Tsing Hua University and ...

The GAA nanowire technology appears as a promising high-performance solution for future nodes, provided that the junctions are further optimized.