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During the cell-aware characterization process, analog simulation is performed with varying resistive values for all resistors for all FinFETs in a given library cell. Exhaustive analog simulation ...
This modeling methodology provided valuable insight into the effect of finFET process changes on sub 5 nm device and circuit performance. We coupled SEMulator3D with BSIM compact modeling and Spectre ...
The test chip will enable the correlation of the simulation models to the FinFET process and contains test structures, standard cells, a PLL and embedded SRAMs. The memory instances include high ...
PITTSBURGH, Oct. 2, 2018 /PRNewswire/ -- ANSYS (NASDAQ: ANSS) announced TSMC certified ANSYS solutions for the 7 nanometer FinFET Plus (N7+) process ... that require their simulation tools to ...
Simulation-based design-technology co-optimization (DTCO) offers us some insight into the sensitivity of FinFET device performance to changes in process flows that impact external resistance. A paper ...
The test chip will enable the correlation of the simulation models to the FinFET process and contains test structures, standard cells, a PLL and embedded SRAMs. The memory instances include ...
Simulation benchmarks show impressive power ... to enable new customer tape-outs on TSMC’s most advanced FinFET process. In addition, SoC designers can now use the foundation IP building blocks ...
First collaboration milestone speeds validation of IP and design correlation on UMC's 14-nm FinFET process Process qualification vehicle validates key process and IP test structures Tapeout helps ...
"Our ongoing collaboration with Synopsys and early customer engagements on TSMC's industry-leading 5nm FinFET process technology result in delivery of platform solutions that enable our mutual ...
EDA software vendor Synopsys has announced that its Galaxy design flow has been certified by TSMC as suitable for designs aimed at its 16nm FinFET process. The V1.0 certification ... tools include ...
This process qualification vehicle will provide ... It also provides data to enable better correlation of the FinFET simulation models to the silicon results. This is the first milestone of ...
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