The first well-behaved inversion-mode InGaAs FinFET with gate length down to 100 nm with ALD Al2O3 as gate dielectric has been demonstrated. Using a damage-free sidewall etching method, FinFETs with ...

Logic semiconductor manufacturers plan to replace FinFET devices with Gate All Around at sub-3nm nodes. Applied Materials has introduced a complex seven chamber system with Atomic Layer Deposition ...

ALD allows for extremely thin film deposition for advanced device scaling and high aspect ratio for 3D structures, such as those found in NAND and FinFETs.

The company’s leadership in ALD, which is essential for the transition from FinFET to GAA transistors, gives it a significant competitive edge.

To shrink electronics further, innovative chemical deposition methods may save the day Researchers experiment with area-selective atomic layer deposition to precisely place layers of conducting ...

U.S. government adds more export control rules targeted against China and other countries that pose security risks. The rules cover tools needed to make chips with GAA transistors or using leading ...

China's Semiconductor Manufacturing International (SMIC) has kicked off volume production of 14nm FinFET chips, and plans to move a newer 12nm FinFET process to risk production by the end of 2019 ...

ASM International seems well-placed to benefit from the transition toward lower geometries in semiconductor chips and memories. Learn why ASMIY stock is a Buy.

When it comes to 3D transistors, you've probably heard of FinFET -- the 3D, "Tri-gate" transistors that are taking Intel (and eventually other silicon foundries) to 22nm and beyond -- but now a ...