Researchers are making progress in developing new types of transistors, called finFETs, which use a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

The finFETs might enable engineers to sidestep a problem threatening to derail the electronics industry. New technologies will be needed for industry to keep pace with Moore's law, an unofficial rule ...

The FinFET manufacturing technology has scaled well from 22-nm chips all the way down to 5-nm chips. The gate-all-around ("GAA") is the next-generation semiconductor process technology, offers two ...

Atomic Layer Deposition (ALD) Equipment Market growth is driven by semiconductor miniaturization, advanced energy storage needs, and eco-friendly innovations in thin-film deposition.Austin, May 30 ...

To control precisely where on surfaces ALD films grow, scientists are using beams of ions, ... into modern nanoelectronic components called FinFETs, or fin field-effect transistors.

ASM International NV (0NX3) has received a new Buy rating, initiated by Stifel Nicolaus analyst, Florian Sager. Florian Sager’s rating is based on ASM International NV’s strong position in the ...

Dubbed the Centura Integrated Gate Stack system, this machine will be the key to creating 22nm high-κ transistors, and a major proponent in the shift to sub-22nm FinFET "3D" transistors.

NEW YORK, June 17, 2019 /PRNewswire/ -- High-k and ALD/CVD Metal Precursors Market Size, Share & Trends Analysis Report By Technology (Interconnect, Capacitor, Gates), By Region (North America ...

T he U.S. Commerce Department's Bureau of Industry and Security (BIS) has proposed a new set of export controls on several emerging technologies, limiting the ability of China and other ...

China's Semiconductor Manufacturing International (SMIC) has kicked off volume production of 14nm FinFET chips, and plans to move a newer 12nm FinFET process to risk production by the end of 2019 ...

The first well-behaved inversion-mode InGaAs FinFET with gate length down to 100 nm with ALD Al2O3 as gate dielectric has been demonstrated. Using a damage-free sidewall etching method, FinFETs with ...