Over the past several years, computer engineers have been searching for new materials that will allow further miniaturization of silicon field-effect ... for top-gate 2D transistors, Nature ...

It is the fastest, most efficient transistor ever,” a Peking University statement claims. That is a confidence boost for a paradigm-shifting semiconductor technology breakthrough. The silicon-free two ...

A field effect transistor ... gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive property of the channel between the drain and the source. 1 Graphene ...

Figure 1: A photograph of the field-effect transistor. The turquoise area in the center of the inset is a flake of molybdenum disulfide, which can be a superconductor, metal, semiconductor or ...

In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, ...

Consequently, the industry made the switch from 2D planar transistors to 3D fin field-effect transistors, abbreviated as FinFETs. In FinFET transistors, the gate wraps around the channel on three ...

Transistors ... sometimes stack 2D materials onto pre-patterned metal contacts. But the research team found that this kind of stacking of 2D materials had a profound effect on their flatness ...

This transistor is a gate-all-around field-effect transistor (GAAFET ... create an "atomically-thin" two-dimensional transistor. 2D bismuth transistors are less brittle and more flexible than ...

Squeezing the right amount of potassium ions between the atomic layers of molybdenum disulfide can turn it from a semiconductor into a metal, superconductor or insulator Figure 1: A photograph of the ...