Here, we present a stacked ferroelectric memory array comprised of laterally gated ferroelectric field-effect transistors (LG-FeFETs). The interlocking effect of the α-In 2 Se 3 is utilized to ...

The researcher said they want to characterize the material further and eventually demonstrate working field-effect transistors using the strained strontium titanate as their gate oxide. The biggest ...

(Credit: Miao et al., 2023) Important to note here is that FeFET (ferroelectric field-effect transistor) is distinct from FeRAM, with the latter having a DRAM-like structure whereby ferroelectric ...

A discovery by an international team of scientists has revealed room-temperature ferroelectric and resistive ... sensitive transistor with a cheap, paper-based ... Phosphorus is a vital component ...

Ferroelectric negative capacitor field-effect transistors (NCFETs) as low-power logic devices are able to break the “heat wall”, which hinders the enhancement of the main frequency of the ...

Rather than employing some kind of variation of the commonly used silicon-based, field-effect transistor (FET), it's all done with two thin layers of boron nitride, a ferroelectric transistor (FeFET).

The bottom-contact transistor has been made by dropping a flake (~29nm thick) of α-In 2 Se 3 onto contacts rather than growing the material from the bottom-up. “When fabricating bottom-contact ...

Through a new combination of materials, the researchers have created ferroelectric "grains" that control a tunnel junction -- an electrical bridging effect -- in the transistor. This is on an ...

Prof Zhang Zhiyong's team at Peking University developed a heterojunction-gated field-effect transistor (HGFET ... has revealed room-temperature ferroelectric and resistive switching behaviors ...