In our November 2019 blog [1], we discussed using virtual fabrication (SEMulator3D) to benchmark different process integration options for Complementary-FET (CFET) fabrication. CFET is a CMOS ...

Researchers from IBM, IMEC, Samsung, and TSMC will present their latest work on vertically-stacked complementary field-effect transistors (CFETs) at the upcoming International Electron Devices ...

What is a complementary device and why has it not been possible to create a complementary VFET? In conventional metal oxide semiconductor field effect transistors (MOSFETs), we have n-type and p-type ...

The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary metal ... MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET ...

[1] The fabrication of a Complementary-Field Effect Transistor (CFET) technology recently described in [2] suggests that it is possible to directly fabricate n-MOS transistors on top of p-MOS ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...

A research team led by Professor Sungjae Cho in the KAIST Department of Physics developed a thickness-controlled black phosphorous tunnel field-effect transistor (TFET) that shows 10-times lower ...

Imec Take, for instance, nanosheet transistors and complementary field-effect transistors (CFETs). Leading chip manufacturers are already shifting to nanosheet devices, which swap the fin in today ...

The next big jump in transistor evolution came with the field-effect transistor. Most modern transistors are field-effect transistors -- specifically metal-oxide semiconductor field-effect ...