CFET is usually seen as a successor to gate-all-around transistors that will enable future technology scaling, but the industry has yet to adopt GAA FETs for mass production. The idea of CFETs ...

The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...

Fig. 5: Imec’s view of transistor roadmap. Imec proposes two options—CFETs and vertical nanowires. Slated for 2.5nm and beyond, a CFET is a more complex version of a gate-all-around device.

Forksheet and CFET technologies While the standard FinFET transistors will last till 3-nm process nodes, the new gate all around (GAA) nanosheet manufacturing technology will take over the high-volume ...

That needs to be developed.” In the sequential approach, NMOS and PMOS transistors are processed on separate wafers, which are then bonded. “With the sequential CFET approach, the NMOS and PMOS ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...