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powerelectronicsworld.net
EPC adds GaN reference design for USB PD 3.1 - News
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ST improves FOM of 100V MOSFETs by 40 percent - News
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EPC and ADI introduce reference design - News
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Silicon-based semiconductor…
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FETs: A mighty marriage - News
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Renesas Brings Industry-Leading Performance of RA8 Series MCUs t…
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ST starts volume production of PowerGaN chips - News
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OKI develops GaN lift off/bonding technology - News
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EPC to demo GaN applications at PCIM - News
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Innoscience to talk about the cost benefits of GaN - News
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